Nexperia

PBSS5220T-QR

Single Bipolar Transistors

Manufacturer
MPN
PBSS5220T-QR
Package / Case
TO-236AB

Technical Specifications

TypeDescription
Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain225
Current - Collector(Ic)2A
Configuration-
TypeDescription
Number1 PNP
TypePNP
Vce Saturation(VCE(sat))225mV
Operating Temp-65°C ~ +150°C
Pd W0.3 W
Package / CaseTO-236AB

Product Introduction

20V 225 2A 1 PNP PNP TO-236AB Single Bipolar Transistors RoHS

Datasheet

📄 Open Download

Alternative Parts

Common PBSS5220T-QR alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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