Nexperia

PBSS4350Z,135

Single Bipolar Transistors

Manufacturer
MPN
PBSS4350Z,135
Package / Case
SOT-223
Key Attributes
TRANS NPN 50V 3A SOT-223

Technical Specifications

TypeDescription
Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Current - Collector(Ic)3A
ConfigurationStandalone
TypeDescription
Number1 NPN
TypeNPN
Vce Saturation(VCE(sat))290mV
Operating Temp-65°C ~ +150°C
Pd W2 W
Package / CaseSOT-223

Product Introduction

NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z.

Features

  • Low collector-emitter saturation voltage
  • High collector current capability: ΨC and ICM
  • High collector current gain (hFE ) at high lC
  • Higher efficiency leading to less heat generation
  • Reduced PCB area requirements compared to DPAK.
  • AEC-Q101 qualified

Applications

  • - Power management - DC/DC converters - Supply line switching - Battery charger - Linear voltage regulation (LDO)

Datasheet

📄 Open Download

Alternative Parts

Common PBSS4350Z,135 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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