Nexperia

PBSS4330PASX

Single Bipolar Transistors

Manufacturer
MPN
PBSS4330PASX
Package / Case
DFN2020D-3
Key Attributes
TRANS NPN 30V 3A DFN2020D-3

Technical Specifications

TypeDescription
Current - Collector Cutoff50uA
Transition frequency(fT)210MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain180
Current - Collector(Ic)3A
ConfigurationStandalone
TypeDescription
Number1 NPN
TypeNPN
Vce Saturation(VCE(sat))220mV
Operating Temp-55°C ~ +175°C
Pd W1.5 W
Package / CaseDFN2020D-3

Product Introduction

NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5330PAS

Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • High temperature applications up to 175 °C
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Leadless small SMD plastic package with soldarable side pads
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Suitable for Automatic Optical Inspection (AOI) of solder joint

Applications

  • - Loadswitch - Battery-driven devices - Power management - Charging circuits - Power switches (e.g. motors, fans)

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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