Nexperia

PBSS4120T,215

Single Bipolar Transistors

Manufacturer
MPN
PBSS4120T,215
Package / Case
SOT-23
Key Attributes
TRANS NPN 20V 1A SOT-23

Technical Specifications

TypeDescription
Current - Collector Cutoff50uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Current - Collector(Ic)1A
TypeDescription
Number1 NPN
TypeNPN
Vce Saturation(VCE(sat))250mV
Operating Temp-65°C ~ +150°C
Pd W0.48 W
Package / CaseSOT-23

Product Introduction

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5120T.

Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative to MOSFETs in specific applications

Applications

  • - Power management - DC/DC conversion - Supply line switching - Battery charger - LCD backlighting - Peripheral driver - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load drivers (e.g. relays, buzzers and motors)

Datasheet

📄 Open Download

Alternative Parts

Common PBSS4120T,215 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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