PBSS4041PX,115
Single Bipolar Transistors
Technical Specifications
| Type | Description |
|---|---|
| Current - Collector Cutoff | 100nA |
| Transition frequency(fT) | 110MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 120 |
| Current - Collector(Ic) | 5A |
| Type | Description |
|---|---|
| Number | 1 PNP |
| Type | PNP |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temp | -55°C ~ +150°C |
| Pd W | 2.5 W |
| Package / Case | SOT-89 |
Product Introduction
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4041NX.
Features
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
- - Loadswitch - Battery-driven devices - Power management - Charging circuits - Power switches (e.g. motors, fans)
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Sourcing Information
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