ON Semiconductor

NTR4101PT1G

Transistors (BJT/MOSFET)

Manufacturer
MPN
NTR4101PT1G
Package / Case
SOT-23
Key Attributes
MOSFET P-CH 20V 3.2A SOT-23

Technical Specifications

TypeDescription
Drain-Source Voltage20 V
Continuous Drain Current3.2 A
Chan TypeP-Channel
Pd W0.73 W
Output Capacitance(Coss)100pF
Configuration-
Gate Threshold Voltage (Vgs(th))1.2V
Reverse Transfer Capacitance (Crss@Vds)75pF
TypeDescription
Number1 P-Channel
Input Capacitance(Ciss)675pF
Vgs±8V
Operating Temperature-55°C~+150°C
Rds On Ohm210mOhm@1.8V
Gate Charge C8.5nC@4.5V
TypeP-Channel
Package / CaseSOT-23

Features

  • Leading -20 V Trench for Low RDS(on)
  • 1.8 V Rated for Low Voltage Gate Drive
  • SOT−23 Surface Mount for Small Footprint
  • NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

  • Load/Power Management for Portables
  • Load/Power Management for Computing
  • Charging Circuits and Battery Protection

Datasheet

📄 Open Download

Alternative Parts

Common NTR4101PT1G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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