ON Semiconductor

NTMFS5C612NLT1G

Transistors (BJT/MOSFET)

Manufacturer
MPN
NTMFS5C612NLT1G
Package / Case
SO-8FL
Key Attributes
MOSFET N-CH 60V 235A SO-8FL

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current235 A
Chan TypeN-Channel
Pd W36 W
Output Capacitance(Coss)2.953nF
Configuration-
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)45pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)6.66nF
Vgs±20V
Operating Temperature-55°C~+175°C
Rds On Ohm2.3mOhm@4.5V
Gate Charge C91nC@10V
TypeN-Channel
Package / CaseSO-8FL

Features

  • Small Footprint (5x6 mm) for Compact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low QG and Capacitance to Minimize Driver Losses
  • NTMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection
  • These Devices are Pb - Free and are RoHS Compliant

Datasheet

📄 Open Download

Alternative Parts

Common NTMFS5C612NLT1G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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