NT5CB128M16JR-FL
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 1.066 GHz |
| Refresh Current | - |
| Memory Size | 2Gbit |
| Memory Format | DDR3 SDRAM |
| Type | Description |
|---|---|
| Operating Temperature | 0°C~+95°C |
| Features | Auto self-refresh;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function |
| Supply Voltage | 1.425V~1.575V |
| Package / Case | TFBGA-96 |
Product Introduction
The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V or 1.35V - 0.067V/+0.1V power supply and are available in BGA packages.
Features
- JEDEC DDR3 Compliant
- 8n Prefetch Architecture - Differential Clock(CK/CK) and Data Strobe(DQS/) - Double-data rate on DQs, DQS and DM
- Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes
- Power Saving Mode - Power Down Mode
- Signal Integrity
- Configurable DS for system compatibility
- Configurable On-Die Termination
- ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240ohm ± 1%)
- Signal Synchronization
- Write Leveling via MR settings 5
- Read Leveling via MPR
- Interface and Power Supply - SSTL_15 for DDR3:VDD/VDDQ = 1.5V(±0.075V) - SSTL_135 for DDR3L:VDD/VDDQ = 1.35V(-0.067/+0.1V)
- Options
- Speed Grade (CL - TRCD - TRP)
- 2133 Mbps / 14 - 14 - 14
- 1866 Mbps / 13 - 13 - 13
- 1600 Mbps / 11 - 11 - 11
- Temperature Range (Tc)
- Commercial Grade = 0℃ ~ 95℃
- Quasi Industrial Grade (-T) = -40℃ ~ 95℃
- Industrial Grade (-1) = -40℃ ~ 95℃
- Programmable Functions
- CAS Latency (6/7/8/9/10/11/13/14)
- CAS Write Latency (5/6/7/8/9/10)
- Additive Latency (0/CL - 1/CL - 2)
- Write Recovery Time (5/6/7/8/10/12/14/16)
- Burst Type (Sequential/Interleaved)
- Burst Length (BL8/BC4/BC4 or 8 on the fly)
- Self Refresh Temperature Range(Normal/Extended)
- Output Driver Impedance (34/40)
- On-Die Termination of Rtt_Nom(20/30/40/60/120)
- On-Die Termination of Rtt_WR(60/120)
- Precharge Power Down (slow/fast)
Datasheet
Alternative Parts
Common NT5CB128M16JR-FL alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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