NT5AD512M16C4-JR
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 1.6 GHz |
| Refresh Current | - |
| Memory Size | 8Gbit |
| Memory Format | DDR4 SDRAM |
| Type | Description |
|---|---|
| Operating Temp | 0°C ~ +95°C |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Asynchronous reset function;Data mask function;Write leveling function;Dynamic on-chip termination;ZQ calibration function;CRC function |
| Working Voltage V | 1.2 V |
| Package / Case | TFBGA-96 |
Product Introduction
8Gbit 1.6GHz DDR4 SDRAM TFBGA-96 Memory
Features
- Compliant with DDR4 standard base specification
- 8n prefetch architecture
- Differential clock (CK/CK) and data strobe (DQS/DQS)
- Double data rate on data lines, data strobe, and data mask
- Bank group–separated I/O gating structure
- Self-refresh abort
- Fine granularity refresh
- Write leveling calibration via mode register settings
- Read leveling calibration via multipurpose register
- Command/address parity
- Data bus write CRC
- Multipurpose register readout
- Boundary scan (x16 width)
- Post-package repair
- Auto self-refresh via on-die temperature sensor
- Auto refresh and self-refresh modes
- Internal data reference voltage training
- Read preamble training
- Gear-down mode
- Per-DRAM addressability
- Configurable drive strength for enhanced system compatibility
- Configurable on-die termination
- Data bus inversion
- ZQ calibration via external ZQ pad (240 Ω ± 1%) for drive strength/ODT impedance accuracy
- Pseudo open-drain interface with point-to-point termination
- Command/address latency
- Maximum power saving mode
- Low power auto self-refresh
- Programmable output driver impedance (34/48)
- Programmable CAS write latency (9/10/11/12/14/16/18/20)
- Programmable additive latency (0/CL-1/CL-2)
- Programmable CS-to-command address latency (3/4/5/6/8)
- Programmable command address parity latency (4/5/6)
- Programmable write recovery time (10/12/14/16/18/20/24)
- Programmable burst type (sequential/interleave)
- Programmable park termination (34/40/48/60/80/120/240)
- Programmable nominal termination (34/40/48/60/80/120/240)
- Programmable write termination (80/120/240)
- Programmable read preamble (1T/2T)
- Programmable write preamble (1T/2T)
- Programmable burst length (BL8/BC4/BC4 or BL8 on-the-fly)
- Programmable low power auto self-refresh (manual: normal/reduced/extended; auto: temperature sensor controlled)
- Speed grades (CL-TRCD-TRP): 2666 Mbps / 19-19-19; 3200 Mbps / 22-22-22
- Operating temperature range (Tc): Commercial: 0°C ~ 95°C; Industrial (-1): -40°C ~ 95°C; Quasi-industrial (-T): -40°C ~ 95°C; Wide-temperature industrial (-U): -40°C ~ 105°C
- Lead-free RoHS compliant and halogen-free
- Free of 5 persistent, bioaccumulative, and toxic substances listed under TSCA
- Supply voltage: VDD/VDDQ/VPP = 1.2V / 1.2V / 2.5V
- AC/DC parameters derated when operating temperature exceeds 95°C
Datasheet
Datasheet is available on request. Send the part number and our team will provide the official documentation.
Alternative Parts
Common NT5AD512M16C4-JR alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
Sourcing NT5AD512M16C4-JR from China? SZ Procure helps international buyers navigate the Shenzhen electronics market and locate suitable supplier options for specific component requirements.
When you need NT5AD512M16C4-JR, SZ Procure can look into supplier options, confirm current availability, compare sourcing quotes and handle purchasing, pre-shipment inspection and consolidated shipment from Shenzhen. Before ordering, the listed specification(s) — Memory Size 8Gbit — can be confirmed with the supplier against the actual part.
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