NSVJ3910SB3T1G
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 0.4 W |
| FET Type | N-Channel |
| Ciss-Input Capacitance | 6pF |
| Number | 1 N-channel |
| Drain Current (Idss) | 20mA |
| Reverse Transfer Capacitance (Crss) | 2.3pF |
| Configuration | - |
| Type | Description |
|---|---|
| Operating Temperature | -55°C~+150°C |
| Gate-Source Breakdown Voltage (Vgss) | 25V |
| Output Capacitance(Coss) | - |
| Gate-Source Cutoff Voltage (VGS(off)) | 600mV |
| Rds On Ohm | - |
| Package / Case | CPH-3 |
Product Introduction
Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive applications.
Features
- High Forward Transfer Admittance
- High Breakdown Voltage
- Low Input Capacitance
- Low Noise Figure
- Pb-Free and RoHS compliance
- AEC-Q101 qualified and PPAP capable
Applications
- Low Noise Amplifier for Automotive AM Radio
Datasheet
Alternative Parts
Common NSVJ3910SB3T1G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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