NCEP026N10D
Transistors (BJT/MOSFET)
Type: N-Channel
Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 200A
Pd - Power Dissipation: 300W
Gate Threshold Voltage (Vgs(th)): 4V
RDS(on): 2.6mΩ@10V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 200 A |
| Chan Type | N-Channel |
| Pd W | 300 W |
| Output Capacitance(Coss) | 1.1nF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17.5nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 2.6mOhm@10V |
| Gate Charge C | 240nC@10V |
| Type | N-Channel |
| Package / Case | TO-263 |
Product Introduction
This series of devices employs Super Trench II technology, uniquely optimized to deliver high-efficiency, high-frequency switching performance. The combination of ultra-low RDS(ON) and Qg minimizes conduction and switching power losses. These devices are ideal for high-frequency switching and synchronous rectification.
Features
- VDS = 100V, ID = 200A
- RDS(ON) = 2.4mΩ, typical (TO-220) @ VGS = 10V
- RDS(ON) = 2.2mΩ, typical (TO-263) @ VGS = 10V
- Excellent gate charge × RDS(on) product (Figure of Merit FOM)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish
- 100% UIS tested!
- 100% ΔVds tested!
Applications
- DC/DC Converter - High-frequency switching and synchronous rectification
Datasheet
Alternative Parts
Common NCEP026N10D alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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