NCE0106R-ES
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 4 A |
| Chan Type | N-Channel |
| Pd W | 3.1 W |
| Output Capacitance(Coss) | 30pF |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 650pF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 120mOhm@10V |
| Type | N-Channel |
| Package / Case | SOT-223 |
Product Introduction
NCE0106R-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. This device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product NCE0106R-ES is lead-free.
Features
- 100V, RDS(ON) = 120 mΩ (typ) at VGS = 10 V
- RDS(ON) = 130 mΩ (typ) at VGS = 4.5 V
- High-density cell design for low RDS(ON)
- Halogen-free material
- Robust and reliable
- Avalanche-rated
- Low leakage current
Applications
- PWM applications
- Load switching
- Power management for portable/desktop PCs
- DC/DC conversion
Datasheet
Alternative Parts
Common NCE0106R-ES alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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