MT29F8G08ABACAH4-IT:C TR
Memory
Technical Specifications
| Type | Description |
|---|---|
| Memory Size | 8Gbit |
| Program / Erase Cycles | 100,000 cycles |
| Data Retention - TDR (Year) | 10 years |
| Block Erase Time(tBE) | 2ms |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 300us |
| Standby Supply Current | - |
| Type | Description |
|---|---|
| Operating Temp | -40°C ~ +85°C |
| Features | Read buffer function;Copy back write function;Software reset function;Hardware write protection function |
| Working Voltage V | 3.15 V |
| Maximum Clock Speed | - |
| Interface | Parallel |
| Package / Case | VFBGA-63 |
Product Introduction
This device is a 2Gb, 4Gb, or 8Gb NAND flash memory operating from a 3V supply with an asynchronous interface. It provides hardware and software write protection, and includes an auto-preload feature that loads the first page of data into the internal data register at power-up. The device uses industry-standard NAND interface pins and supports a command-based user interface. Its architecture is organized as 2,112 bytes per page (2,048 bytes plus 64 spare bytes), with 64 pages per block (128K bytes plus 4K bytes). The 2Gb device contains 2,048 blocks in total; the 4Gb device contains 4,096 blocks; and the 8Gb device contains 8,192 blocks. The spare area is typically used to store ECC codes, bad block information, and/or other application-specific metadata. The device is available in a 48-pin TSOP Type 1 package.
Features
- Organization:
- Page size:
- x8: 2,112 bytes (2,048 + 64 bytes)
- x16: 1,056 words (1,024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks
- Read performance:
- Random read: 25μs
- Sequential read: 30ns (3V x8 only)
- Write performance:
- Page program: 300μs (TYP)
- Block erase: 2ms (TYP)
- Endurance: 100,000 PROGRAM/ERASE cycles
- Data retention: 10 years
- First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles)
- VCC: 2.7V - 3.6V
- Automated PROGRAM and ERASE
- Basic NAND command set:
- PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET
- New commands:
- PAGE READ CACHE MODE
- READ UNIQUE ID (contact factory)
- READ ID2 (contact factory)
- Operation status byte provides a software method of detecting:
- PROGRAM/ERASE operation completion
- PROGRAM/ERASE pass/fail condition
- Write- protect status
- Ready/busy# (R/B#) pin provides a hardware method of detecting PROGRAM or ERASE cycle completion
- PRE pin: prefetch on power up
- WP# pin: hardware write protect
Applications
- - Solid-state drives - Memory cards - USB flash drives - Embedded systems - Consumer electronics
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
Need MT29F8G08ABACAH4-IT:C TR from Micron Technology for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
When you need MT29F8G08ABACAH4-IT:C TR, SZ Procure can look into supplier options, confirm current availability, compare sourcing quotes and handle purchasing, pre-shipment inspection and consolidated shipment from Shenzhen. Before ordering, the listed specification(s) — Memory Size 8Gbit — can be confirmed with the supplier against the actual part.
Need MT29F8G08ABACAH4-IT:C TR? Send us your required quantity and specifications for a sourcing check and quotation.