MMUN2233LT1G
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Current - Collector Cutoff | 100nA |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 250mV |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kOhm |
| Type | Description |
|---|---|
| Resistor Ratio | 0.1 |
| Voltage - Input(Max)(VI(off)) | 600mV |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V |
| Operating Temperature | -55°C~+150°C |
| Type | NPN |
| Number | 1 NPN (Pre-Biased) |
| Pd W | 0.246 W |
| Package / Case | SOT-23 |
Product Introduction
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Datasheet
Alternative Parts
Common MMUN2233LT1G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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