ON Semiconductor

MMBT6427LT1G

Transistors (BJT/MOSFET)

Manufacturer
MPN
MMBT6427LT1G
Package / Case
SOT-23
Key Attributes
type: NPN
Collector - Emitter Voltage VCEO: 40V
Current - Collector(Ic): 500mA
DC Current Gain: 20000

Technical Specifications

TypeDescription
Vbe Saturation(VBE(sat))2V
Current - Collector Cutoff50nA
Vbe On(VBE(on))1.75V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO12V
DC Current Gain20000
TypeDescription
Current - Collector(Ic)500mA
TypeNPN
Vce Saturation(VCE(sat))1.5V
Operating Temperature-55°C~+150°C@(Tj)
Pd W0.225 W
Package / CaseSOT-23

Features

  • S-prefix products for automotive and other applications requiring unique place of origin and change control requirements; AEC-Q101 qualified with PPAP capability
  • Lead-free, halogen-free/BFR-free, and RoHS compliant

Datasheet

📄 Open Download

Alternative Parts

Common MMBT6427LT1G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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