TDSEMIC

MMBT5551 G1

Transistors (BJT/MOSFET)

Manufacturer
TDSEMICAsian Brands
MPN
MMBT5551 G1
Package / Case
SOT-23
Key Attributes
TRANS NPN 160V 0.6A SOT-23

Technical Specifications

TypeDescription
Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Current - Collector(Ic)600mA
ConfigurationStandalone
TypeDescription
Number1 NPN
TypeNPN
Vce Saturation(VCE(sat))250mV
Operating Temperature-
Pd W0.3 W
Package / CaseSOT-23

Features

  • Complementary to MMBT5401
  • Ideal for Medium Power Amplification and Switching

Datasheet

📄 Open Download

Alternative Parts

Common MMBT5551 G1 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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