MMBT5551-E
Transistors (BJT/MOSFET)
Manufacturer
MDD(Microdiode Semiconductor)Asian Brands
MPN
MMBT5551-E
Product Type
Package / Case
SOT-23
Datasheet
Key Attributes
TRANS NPN 160V 0.6A SOT-23
Technical Specifications
| Type | Description |
|---|---|
| Current - Collector Cutoff | 50nA |
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 160V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 300 |
| Current - Collector(Ic) | 600mA |
| Configuration | Standalone |
| Type | Description |
|---|---|
| Number | 1 NPN |
| Type | NPN |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55°C~+150°C |
| Pd W | 0.3 W |
| Package / Case | SOT-23 |
Features
- Complementary to MMBT5401
- Ideal for Medium Power Amplification and Switching
Datasheet
Alternative Parts
Common MMBT5551-E alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Sourcing Information
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