ON Semiconductor

MMBT5550LT1G

Transistors (BJT/MOSFET)

Manufacturer
MPN
MMBT5550LT1G
Package / Case
SOT-23
Key Attributes
TRANS NPN 140V 600mA SOT-23

Technical Specifications

TypeDescription
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO6V
DC Current Gain60
Current - Collector(Ic)600mA
Number1 NPN
TypeDescription
TypeNPN
Vce Saturation(VCE(sat))250mV
Operating Temperature-55°C~+150°C
Pd W0.225 W
Package / CaseSOT-23

Features

  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Datasheet

📄 Open Download

Alternative Parts

Common MMBT5550LT1G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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