ON Semiconductor

MMBFJ177LT1G

Transistors (BJT/MOSFET)

Manufacturer
MPN
MMBFJ177LT1G
Package / Case
SOT-23
Key Attributes
JFET Chopper P-Channel - Depletion

Technical Specifications

TypeDescription
Pd W0.225 W
Rds On Ohm300Ω
FET TypeP-Channel
Ciss-Input Capacitance11pF
Drain Current (Idss)1.5mA
Number1 P-Channel
Reverse Transfer Capacitance (Crss)-
TypeDescription
Configuration-
Operating Temperature-55°C~+150°C
Gate-Source Breakdown Voltage (Vgss)30V
Output Capacitance(Coss)-
Gate-Source Cutoff Voltage (VGS(off))800mV
Package / CaseSOT-23

Features

  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Datasheet

📄 Open Download

Alternative Parts

Common MMBFJ177LT1G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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