ON Semiconductor

MMBF4416

Transistors (BJT/MOSFET)

Manufacturer
MPN
MMBF4416
Package / Case
SOT-23
Key Attributes
Number: 1 N-channel
Gate-Source Breakdown Voltage (Vgss): 30V
Pd - Power Dissipation: 225mW
Drain Current (Idss): 15mA

Technical Specifications

TypeDescription
Pd W0.225 W
FET TypeN-Channel
Drain Current (Idss)15mA
Configuration-
Reverse Transfer Capacitance (Crss@Vds)-
Gate-Source Breakdown Voltage (Vgss)30V
Number1 N-channel
TypeDescription
Input Capacitance(Ciss)4pF
Gate-Source Cutoff Voltage (VGS(off))2.5V
Output Capacitance(Coss)-
Rds On Ohm-
Operating Temperature-55°C~+150°C
Package / CaseSOT-23

Datasheet

📄 Open Download

Alternative Parts

Common MMBF4416 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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