ON Semiconductor

MMBF170LT1G

Transistors (BJT/MOSFET)

Manufacturer
MPN
MMBF170LT1G
Package / Case
SOT-23
Key Attributes
MOSFET N-CH 60V 0.5A SOT-23

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current500 mA
Chan TypeN-Channel
Pd W0.225 W
Output Capacitance(Coss)-
Configuration-
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)-
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)60pF
Vgs±20V
Operating Temperature-55°C~+150°C
Rds On Ohm5Ohm@10V
Gate Charge C-
TypeN-Channel
Package / CaseSOT-23

Features

  • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant

Datasheet

📄 Open Download

Alternative Parts

Common MMBF170LT1G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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