MDT18N20
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 18 A |
| Pd W | 130 W |
| Rds On Ohm | 0.18 Ω |
| Gate Charge C | 23.0 |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.32nF |
| Operating Temp | -55°C ~ +150°C |
| Package / Case | TO-252 |
Product Introduction
MDT18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.
Features
- VDS = 200 V, ID = 18A
- RDS(ON) < 180mΩ @ VGS = 10V
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product
Applications
- - High frequency switching mode power supply
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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