MDT15N10
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 15 A |
| Chan Type | N-Channel |
| Pd W | 31 W |
| Rds On Ohm | 0.115 Ω |
| Gate Charge C | 16.0 |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 680pF |
| Operating Temp | -55°C ~ +175°C |
| Output Cap Coss | 1.1e-10 |
| Type | N-Channel |
| Package / Case | TO-252 |
Product Introduction
MDT15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications
Features
- VDS = 100V, ID = 15A
- RDS(ON) < 90mΩ @ VGS = 10V
- RDS(ON) < 115mΩ @ VGS = 4.5V
- High density cell design for lower Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Applications
- - Power switching application - Hard switched and High frequency circuits - Uninterruptible power supply
Datasheet
Alternative Parts
Common MDT15N10 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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