MDDG10R08P
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 75 A |
| Chan Type | N-Channel |
| Pd W | 100 W |
| Output Capacitance(Coss) | 410pF |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 6.5mOhm@10V;8.3mOhm@4.5V |
| Gate Charge C | 41nC@10V |
| Type | N-Channel |
| Package / Case | TO-220C-3L |
Product Introduction
This N-channel medium-voltage (MV) MOSFET is manufactured using MDD Semiconductor's advanced power trench process, which incorporates shielded gate technology. The process is optimized to minimize on-resistance while maintaining superior switching performance through a best-in-class soft body diode.
Features
- Maximum on-resistance RDS(on) = 8 mΩ at VGS = 10 V, ID = 35 A
- Ultra-low reverse recovery charge Qrr
- 100% tested for unclamped inductive switching (UIS)
- RoHS compliant
Applications
- Synchronous rectification for AC/DC fast chargers
- Motor drives and uninterruptible power supplies
- Micro solar inverters
- Battery management systems
Datasheet
Alternative Parts
Common MDDG10R08P alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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