MDD(Microdiode Semiconductor)

MDD50N03D

Single FETs, MOSFETs

Manufacturer
MPN
MDD50N03D
Package / Case
TO-252
Key Attributes
MOSFET N-CH 30V 50A TO-252

Technical Specifications

TypeDescription
Drain-Source Voltage30 V
Continuous Drain Current50 A
Pd W28 W
Rds On Ohm0.007 Ω
Gate Charge C23.6
Gate Threshold Voltage (Vgs(th))1.5V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)164pF
Number1 N-channel
Input Capacitance(Ciss)1.015nF
Operating Temp-50°C ~ +150°C
Output Cap Coss2.01e-10
Package / CaseTO-252

Product Introduction

N-Channel 30V 50A 28W Surface Mount TO-252

Features

  • Trench power low-voltage MOSFET technology
  • Superior thermal dissipation package
  • High-density cell design for reduced RDS(ON)
  • Halogen-free

Applications

  • - High-current load applications - Load switches - Hard switching and high-frequency circuits - Uninterruptible power supplies

Datasheet

📄 Open Download

Alternative Parts

Common MDD50N03D alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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