ON Semiconductor

MBT3904DW1T1G

Transistors (BJT/MOSFET)

Manufacturer
MPN
MBT3904DW1T1G
Package / Case
SOT-363
Key Attributes
TRANS NPN 40V 200mA SOT-363

Technical Specifications

TypeDescription
Current - Collector Cutoff50nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))300mV
TypeDescription
TypeNPN
Number2 NPN
Current - Collector(Ic)200mA
Pd W0.15 W
Operating Temperature-55°C~+150°C
Package / CaseSOT-363

Datasheet

📄 Open Download

Alternative Parts

Common MBT3904DW1T1G alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541210000
USHTS8541210095
TARIC8541210000
TypeDetails
CAHTS8541210000
BRHTS85412199
INHTS85412100
MXHTS8541.21.01

Sourcing Information

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