M24M02-DRMN6TP
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 1 MHz |
| Memory Size | 2Mbit |
| Access Time | 450ns |
| Data Retention - TDR (Year) | 200 Years |
| Write Cycle Time(tWC) | 10ms |
| Standby Supply Current | 5uA |
| Type | Description |
|---|---|
| Write Cycle Endurance | 4,000,000 Cycles |
| Operating Temperature | -40°C~+85°C |
| Features | Hardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function |
| Supply Voltage | 1.8V~5.5V |
| Interface | I2C |
| Package / Case | SOIC-8 |
Product Introduction
The M24M02-DR is a 2 Mbit |²C -compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 256 Kx8 bits.
The M24M02-DR can operate with a supply voltage from 1.8 V to 5.5 V over an ambient temperature range of -40 ℃ /+85 ℃
The M24M02-DR offers an additional page, named the Identification Page (256 byte). The Identification Page can be used to store sensitive application parameters which can be (later) permanently locked in Read-only mode.
Features
- Compatible with all I²C bus modes: 1 MHz, 400 kHz, 100 kHz
- Memory array: 2 Mbit (256 Kbyte) of EEPROM
- Page size: 256 byte
- Additional Write lockable page
- Single supply voltage: 1.8 V to 5.5 V over -40 ℃ /+85 ℃
- Unsawn wafer
Datasheet
Alternative Parts
Common M24M02-DRMN6TP alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | 3A991B1B1 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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