LND150N8-G
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 500 V |
| Continuous Drain Current | 0.03 A |
| Chan Type | N-Channel |
| Pd W | 1.6 W |
| Rds On Ohm | 1000 Ω |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10pF |
| Vgs | +/-20V |
| Output Cap Coss | 2e-12 |
| Operating Temp | -55°C ~ +150°C |
| Gate Charge C | - |
| Type | N-Channel |
| Package / Case | SOT-89 |
Product Introduction
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected.
The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Features
- No secondary breakdown
- Low gate drive power requirement
- Easy to parallel
- Excellent thermal stability
- Integrated body diode
- High input impedance and low Ciss
- ESD gate protection
Applications
- - Solid state relays - Normally-on switches - Converters - Power supply circuits - Constant current sources - Input protection circuits
Datasheet
Alternative Parts
Common LND150N8-G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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