luJing

LJ2N120D

Transistors (BJT/MOSFET)

Manufacturer
luJingAsian Brands
MPN
LJ2N120D
Package / Case
TO-252
Key Attributes
Number: 1 N-channel
Type: N-Channel
Drain to Source Voltage: 1.2kV
Current - Continuous Drain(Id): 2A
Pd - Power Dissipation: 75W
Gate Threshold Voltage (Vgs(th)): 4V
RDS(on): 6.75Ω@10V

Technical Specifications

TypeDescription
Drain-Source Voltage1.2 V
Continuous Drain Current2 A
Chan TypeN-Channel
Pd W75 W
Output Capacitance(Coss)65pF
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)12pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)700pF
Operating Temperature-55°C~+150°C
Rds On Ohm6.75Ohm@10V
Gate Charge C31nC@10V
TypeN-Channel
Package / CaseTO-252

Features

  • High rated current
  • Low on-resistance R<sub>DS(on)</sub>
  • Low capacitance
  • Low total gate charge
  • Tighter source-drain diode forward voltage V<sub>SD</sub> specification
  • Specified avalanche energy
  • N-channel power MOSFET

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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