K4A8G165WC-BCWE
Memory
Manufacturer
MPN
K4A8G165WC-BCWE
Product Type
Maximum Clock Speed
1.333 GHz
Package / Case
FBGA-96
Datasheet
Key Attributes
DDR4 SDRAM
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 1.333 GHz |
| Refresh Current | - |
| Memory Size | 8Gbit |
| Memory Format | DDR4 SDRAM |
| Type | Description |
|---|---|
| Operating Temperature | 0°C~+95°C |
| Features | Auto precharge function;Asynchronous reset function;CRC function;ZQ calibration function;Dynamic on-chip termination;Data mask function |
| Supply Voltage | 1.14V~1.26V |
| Package / Case | FBGA-96 |
Features
- JEDEC standard 1.2V (1.14V~1.26V)
- VDDQ = 1.2V (1.14V~1.26V)
- VPP = 2.5V (2.375V~2.75V)
- 800 MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin
- 8 Banks (2 Bank Groups)
- Programmable CAS Latency (posted CAS): 10,11,12,13,14,15,16,17,18,19,20
- Programmable CAS Write Latency (CWL)=9,11 (DDR4-1600), 10,12 (DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400) and 14,18 (DDR4- 2666)
- 8-bit pre-fetch
- Burst Length: 8, 4 with fCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
- Bi-directional Differential Data-Strobe
- Internal (self) calibration: Internal self calibration through ZQ pin (RZ0:240 ohm ±1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < T
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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