Samsung Electronics

K4A4G165WF-BCTD

Memory

MPN
K4A4G165WF-BCTD
Product Type
Maximum Clock Speed
1.6 GHz
Package / Case
FBGA-96
Key Attributes
4Gb F-die DDR4 SDRAM x16 only

Technical Specifications

TypeDescription
Maximum Clock Speed1.6 GHz
Refresh Current-
Memory Size4Gbit
Memory FormatDDR4 SDRAM
TypeDescription
Operating Temperature0°C~+95°C
FeaturesAuto precharge function;Asynchronous reset function;CRC function;ZQ calibration function;Dynamic on-chip termination;Data mask function
Supply Voltage1.14V~1.26V
Package / CaseFBGA-96

Features

  • JEDEC standard 1.2V (1.14V~1.26V)
  • VDDQ = 1.2V (1.14V~1.26V)
  • VPP = 2.5V (2.375V~2.75V)
  • 800 MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin, 1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin, 1333MHz fCK for 2666Mb/sec/pin, 1600MHz fCK for 3200Mb/sec/pin
  • 8 Banks (2 Bank Groups)
  • Programmable CAS Latency (posted CAS): 10,11,12,13,14,15,16,17,18,19,20,22,24 Programmable CAS Write Latency (CWL)=9, 11 (DDR4-1600), 10,12 (DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400), 14,18 (DDR4-2666) and 16,20 (DDR4-3200)
  • 8-bit pre-fetch
  • Burst Length: 8, 4 with ICCD = 4 wh

Datasheet

📄 Open Download

Alternative Parts

Common K4A4G165WF-BCTD alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8542329000
USHTS8542320071
TARIC8542329000
TypeDetails
CAHTS8542330000
BRHTS85423299
INHTS85423200
MXHTS8542.32.99

Sourcing Information

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