IXTQ96N20P
Single FETs, MOSFETs
Manufacturer
MPN
IXTQ96N20P
Product Type
Package / Case
TO-3P-3
Datasheet
Key Attributes
MOSFET N-CH 200V TO-3P-3
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 96 A |
| Chan Type | N-Channel |
| Pd W | 600 W |
| Rds On Ohm | 0.024 Ω |
| Gate Charge C | 145.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 270pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.8nF |
| Vgs | +/-20V |
| Output Cap Coss | 1.02e-09 |
| Operating Temp | -55°C ~ +175°C |
| Type | N-Channel |
| Package / Case | TO-3P-3 |
Product Introduction
N-Channel 200V Through Hole TO-3P-3
Features
- International standard packages
- Unclamped Inductive Switching (UIS) rated
- Low package inductance - easy to drive and to protect
- Easy to mount
- Space savings
- High power density
Datasheet
Alternative Parts
Common IXTQ96N20P alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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