Littelfuse/IXYS

IXTN170P10P

Single FETs, MOSFETs

Manufacturer
MPN
IXTN170P10P
Package / Case
SOT-227-4
Key Attributes
MOSFET P-CH 100V 170A SOT-227-4

Technical Specifications

TypeDescription
Drain-Source Voltage100 V
Continuous Drain Current170 A
Chan TypeP-Channel
Pd W890 W
Rds On Ohm0.014 Ω
Gate Charge C240.0
Gate Threshold Voltage (Vgs(th))4V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)32pF
Number1 P-Channel
Input Capacitance(Ciss)12.6nF
Operating Temp-55°C ~ +150°C
Output Cap Coss4.190000000000001e-09
TypeP-Channel
Package / CaseSOT-227-4

Product Introduction

P-Channel 100V 170A 890W SOT-227-4

Features

  • International standard package
  • miniBLOC, with aluminum nitride isolation
  • Robust Polar P^TM process
  • High current handling capability
  • Fast intrinsic diode
  • Avalanche rated
  • Low package inductance
  • Easy to mount
  • Space saving
  • High power density

Applications

  • - High-side switches - Push-pull amplifiers - DC choppers - Automatic test equipment - Current regulators

Datasheet

📄 Open Download

Alternative Parts

Common IXTN170P10P alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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