IXTN170P10P
Single FETs, MOSFETs
Manufacturer
MPN
IXTN170P10P
Product Type
Package / Case
SOT-227-4
Datasheet
Key Attributes
MOSFET P-CH 100V 170A SOT-227-4
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 170 A |
| Chan Type | P-Channel |
| Pd W | 890 W |
| Rds On Ohm | 0.014 Ω |
| Gate Charge C | 240.0 |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12.6nF |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 4.190000000000001e-09 |
| Type | P-Channel |
| Package / Case | SOT-227-4 |
Product Introduction
P-Channel 100V 170A 890W SOT-227-4
Features
- International standard package
- miniBLOC, with aluminum nitride isolation
- Robust Polar P^TM process
- High current handling capability
- Fast intrinsic diode
- Avalanche rated
- Low package inductance
- Easy to mount
- Space saving
- High power density
Applications
- - High-side switches - Push-pull amplifiers - DC choppers - Automatic test equipment - Current regulators
Datasheet
Alternative Parts
Common IXTN170P10P alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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