IXTH48N65X2
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 650 V |
| Continuous Drain Current | 48 A |
| Chan Type | N-Channel |
| Pd W | 660 W |
| Rds On Ohm | 0.068 Ω |
| Gate Charge C | 76.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 6.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.3nF |
| Vgs | +/-30V |
| Output Cap Coss | 3.28e-09 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | TO-247 |
Product Introduction
These N-channel enhancement mode power MOSFETs are manufactured using split-gate trench DMOST technology. This advanced technology is specifically designed to minimize on-state resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.
Features
- Industry-standard package
- Low RDS(ON) and QG
- Avalanche-rated
- Low package inductance
- High power density
- Easy to mount
- Space-saving
Applications
- - Switch-mode and resonant-mode power supplies - DC-DC converters - Power Factor Correction (PFC) circuits - AC and DC motor drives - Robotics and servo control
Datasheet
Alternative Parts
Common IXTH48N65X2 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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