IXTH1N200P3HV
Transistors (BJT/MOSFET)
Current - Continuous Drain(Id): 1A
Pd - Power Dissipation: 125W
Gate Threshold Voltage (Vgs(th)): 2V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 2 V |
| Continuous Drain Current | 1 A |
| Pd W | 125 W |
| Type | Description |
|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Package / Case | TO-247HV |
Product Introduction
The new MDmesh M6 technology incorporates the latest improvements to the well-known and proven SJ MOSFET MDmesh family. It combines excellent on-resistance per unit area (RDS(on)) improvement with efficient switching performance, while delivering a user-friendly experience to achieve maximum efficiency in end applications.
Features
- High Blocking Voltage
- High Voltage Packages
- Easy to Mount
- Space Savings
- High Power Density
Applications
- High Voltage Power Supplies
- Capacitor Discharge Applications
- Pulse Circuits
- Laser and X-Ray Generation Systems
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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