Littelfuse/IXYS

IXTA08N120P

Single FETs, MOSFETs

Manufacturer
MPN
IXTA08N120P
Package / Case
TO-263-3
Key Attributes
MOSFET N-CH 1.2kV 800mA TO-263-3

Technical Specifications

TypeDescription
Drain-Source Voltage1.2 V
Continuous Drain Current0.8 A
Chan TypeN-Channel
Pd W50 W
Rds On Ohm20.5 Ω
Gate Charge C14.0
Gate Threshold Voltage (Vgs(th))4.5V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)4.7pF
Number1 N-channel
Input Capacitance(Ciss)333pF
Operating Temp-55°C ~ +150°C
Output Cap Coss2e-11
TypeN-Channel
Package / CaseTO-263-3

Product Introduction

1.2kV 800mA 4.5V 50W 20.5Ω@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS

Features

  • Industry-standard package
  • Low gate charge (QG)
  • Avalanche-rated
  • Low package inductance
  • Fast intrinsic rectifier
  • High power density
  • Easy to mount
  • Space-saving

Applications

  • - DC-DC converters - Switch-mode and resonant-mode power supplies - AC and DC motor drivers - Discharge circuits in lasers, spark igniters, and RF generators - High-voltage pulsed power applications

Datasheet

📄 Open Download

Alternative Parts

Common IXTA08N120P alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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