VBsemi Elec

IXKR40N60C-VB

Transistors (BJT/MOSFET)

Manufacturer
VBsemi ElecAsian Brands
MPN
IXKR40N60C-VB
Package / Case
TO-247AC
Key Attributes
MOSFET N-CH 650V 47A TO-247AC

Technical Specifications

TypeDescription
Drain-Source Voltage650 V
Continuous Drain Current47 A
Chan TypeN-Channel
Pd W415 W
Output Capacitance(Coss)251pF
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)1pF
Number1 N-channel
TypeDescription
Input Capacitance(Ciss)5.682nF
Vgs±30V
Operating Temperature-55°C~+150°C
Rds On Ohm60mOhm@10V
Gate Charge C273nC@10V
TypeN-Channel
Package / CaseTO-247AC

Features

  • Low figure-of-merit (FOM) R_on×Q_g
  • Low input capacitance (C_iss)
  • Reduced switching and conduction losses
  • Ultra low gate charge (Q_g)
  • Avalanche energy rated (UIS)

Applications

  • Server and telecom power supplies
  • Switch mode power supplies (SMPS)
  • Power factor correction power supplies (PFC)
  • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
  • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters)

Datasheet

📄 Open Download

Alternative Parts

Common IXKR40N60C-VB alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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