IXFP56N30X3
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 300 V |
| Continuous Drain Current | 56 A |
| Chan Type | N-Channel |
| Pd W | 320 W |
| Rds On Ohm | 0.027 Ω |
| Gate Charge C | 56.0 |
| Configuration | - |
| Type | Description |
|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | TO-220 |
Product Introduction
These N-channel enhancement-mode power MOSFETs are fabricated using Fairchild Semiconductor's proprietary planar stripe DMOS technology.
This advanced technology has been especially designed to minimize on-resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are well suited for use in high-efficiency switching DC/DC converters, switch-mode power supplies, and motor control applications.
Features
- International Standard Packages
- Low RDS(ON) and QG
- Avalanche Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings
Applications
- - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls
Datasheet
Alternative Parts
Common IXFP56N30X3 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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For IXFP56N30X3, we can check current supplier availability, compare quotations from multiple sources, coordinate purchasing, and arrange pre-shipment inspection and shipment consolidation according to your requirements.
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