IXFN62N80Q3
Single FETs, MOSFETs
Manufacturer
MPN
IXFN62N80Q3
Product Type
Package / Case
SOT-227
Datasheet
Key Attributes
MOSFET N-CH 800V 49A
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 800 V |
| Continuous Drain Current | 49 A |
| Chan Type | N-Channel |
| Pd W | 960 W |
| Rds On Ohm | 0.14 Ω |
| Gate Charge C | 270.0 |
| Gate Threshold Voltage (Vgs(th)) | 6.5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.6nF |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 1.26e-09 |
| Type | N-Channel |
| Package / Case | SOT-227 |
Product Introduction
800V 49A 6.5V 960W 140mΩ@10V 1 N-channel N-Channel SOT-227 Single FETs, MOSFETs RoHS
Features
- International standard package
- Low intrinsic gate resistance
- miniBLOC package with aluminum nitride isolation
- Avalanche rated
- Low package inductance
- Fast intrinsic rectifier
- Low RDS(ON) and QG
- High power density
- Easy to install
- Space-saving
Applications
- - DC-DC Converters - Battery Chargers - Switch Mode and Resonant Mode Power Supplies - DC Choppers - Temperature and Lighting Control
Datasheet
Alternative Parts
Common IXFN62N80Q3 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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