IXFN180N15P
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 150 V |
| Continuous Drain Current | 150 A |
| Pd W | 680 W |
| Rds On Ohm | 0.011 Ω |
| Gate Charge C | 240.0 |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 515pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7nF |
| Operating Temp | -55°C ~ +175°C |
| Package / Case | SOT-227B |
Product Introduction
The 4485 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. The 4485 is RoHS compliant and meets green product requirements, with 100% guaranteed avalanche capability (EAS) and full functional reliability qualification.
Features
- Industry-standard package
- Package epoxy meets UL 94 V-0 flammability rating
- miniBLOC package with aluminum nitride isolation
- Fast recovery diode
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Easy to drive and protect
Datasheet
Alternative Parts
Common IXFN180N15P alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Need IXFN180N15P from Littelfuse/IXYS for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
For IXFN180N15P, we can check current supplier availability, compare quotations from multiple sources, coordinate purchasing, and arrange pre-shipment inspection and shipment consolidation according to your requirements.
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