IXFN132N50P3
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 500 V |
| Continuous Drain Current | 112 A |
| Chan Type | N-Channel |
| Pd W | 1500 W |
| Rds On Ohm | 0.039 Ω |
| Gate Charge C | 267.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 18.6nF |
| Vgs | +/-30V |
| Output Cap Coss | 1.71e-09 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | SOT-227B |
Product Introduction
This power MOSFET is manufactured using advanced planar Vertical Double-diffused Metal-Oxide-Semiconductor (VDMOS) technology. The resulting devices feature low on-resistance, excellent switching performance, and high avalanche energy.
Features
- Industry-standard package
- miniBLOC package with aluminum nitride isolation
- Avalanche-rated
- Low package inductance
- Fast intrinsic rectifier
- Low RDS(ON) and QG
- Easy to install
- Space-saving
Applications
- - DC-DC Converters - Battery Chargers - Switch-Mode and Resonant-Mode Power Supplies - Uninterruptible Power Supplies - AC Motor Drives - High-Speed Power Switching Applications
Datasheet
Alternative Parts
Common IXFN132N50P3 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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