IXFN120N65X2
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 650 V |
| Continuous Drain Current | 108 A |
| Chan Type | N-Channel |
| Pd W | 890 W |
| Rds On Ohm | 0.024 Ω |
| Gate Charge C | 240.0 |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14nF |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 8.7e-09 |
| Type | N-Channel |
| Package / Case | SOT-227 |
Product Introduction
This N-channel power MOSFET is based on the innovative superjunction MDmesh DM9 technology, designed for medium/high-voltage MOSFETs. It features an extremely low on-resistance RDS(on) per unit area and is equipped with a fast recovery diode. The silicon-based DM9 technology leverages a multi-drain manufacturing process to optimize the device structure. The fast recovery diode offers ultra-low recovery charge (Qrr), recovery time (trr), and on-resistance RDS(on), making this fast-switching superjunction power MOSFET ideal for demanding high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Features
- International Standard Package
- miniBLOC, with Aluminium Nitride Isolation
- Isolation Voltage 2500 V~
- High Current Handling Capability
- Fast Intrinsic Diode
- Avalanche Rated
- Low RDS(on)
- High Power Density
- Easy to Mount
- Space Savings
Applications
- - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls
Datasheet
Alternative Parts
Common IXFN120N65X2 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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