IXFN110N60P3
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 600 V |
| Continuous Drain Current | 55 A |
| Chan Type | N-Channel |
| Pd W | 1500 W |
| Rds On Ohm | 0.056 Ω |
| Gate Charge C | 254.0 |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 18nF |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 1.5500000000000002e-09 |
| Type | N-Channel |
| Package / Case | SOT-227B |
Product Introduction
This P-channel logic-level MOSFET is manufactured using the advanced PowerTrench process, which has been specially optimized to minimize on-resistance while maintaining low gate charge for superior switching performance.
These devices are ideal for notebook computer applications, including load switching, power management, battery charging circuits, and DC/DC conversion.
Features
- International Standard Package
- miniBLOC with Aluminum Nitride Isolation
- Avalanche Rated
- Low Package Inductance
- Fast Intrinsic Rectifier
- Low RDS(on) and QG
- Easy to Mount
- Space Savings
Applications
- - DC-DC Converters - Battery Chargers - Switch-Mode and Resonant-Mode Power Supplies - Uninterrupted Power Supplies - AC Motor Drives - High Speed Power Switching Applications
Datasheet
Alternative Parts
Common IXFN110N60P3 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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Our Shenzhen sourcing team can help with supplier sourcing, availability checks and quotation comparison for IXFN110N60P3, then coordinate procurement, supplier screening, inspection and international shipping based on what you need.
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