Littelfuse/IXYS

IXFH80N65X2

Single FETs, MOSFETs

Manufacturer
MPN
IXFH80N65X2
Package / Case
TO-247
Key Attributes
MOSFET N-CH 650V 80A TO-247

Technical Specifications

TypeDescription
Drain-Source Voltage650 V
Continuous Drain Current80 A
Chan TypeN-Channel
Pd W890 W
Rds On Ohm0.038 Ω
Gate Charge C140.0
Configuration-
Gate Threshold Voltage (Vgs(th))3.5V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)1.6pF
Number1 N-channel
Input Capacitance(Ciss)8.3nF
Vgs+/-30V
Output Cap Coss5.01e-09
Operating Temp-55°C ~ +150°C
TypeN-Channel
Package / CaseTO-247

Product Introduction

LonFET™ power MOSFETs are manufactured using advanced superjunction technology, resulting in devices with extremely low on-resistance — ideally suited for applications requiring high power density and superior efficiency.

Features

  • International Standard Packages
  • Low RDS(ON) and QG
  • Avalanche Rated
  • Low Package Inductance
  • High Power Density
  • Easy to Mount
  • Space Savings

Applications

  • - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls

Datasheet

📄 Open Download

Alternative Parts

Common IXFH80N65X2 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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