IXFH22N65X2
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 650 V |
| Continuous Drain Current | 22 A |
| Chan Type | N-Channel |
| Pd W | 390 W |
| Rds On Ohm | 0.145 Ω |
| Gate Charge C | 38.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.19nF |
| Vgs | +/-30V |
| Output Cap Coss | 1.4600000000000001e-09 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | TO-247 |
Product Introduction
The NCEP0160F employs super trench technology, uniquely optimized to deliver the highest efficiency high-frequency switching performance. With ultra-low drain-source on-resistance (RDS(ON)) and gate charge (Qg), both conduction and switching power losses are minimized. This device is ideal for high-frequency switching and synchronous rectification applications.
Features
- International Standard Packages
- Low RDS(ON) and QG
- Avalanche Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings
Applications
- - Switch-Mode and Resonant-Mode Power Supplies - DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls
Datasheet
Alternative Parts
Common IXFH22N65X2 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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