IXFH16N120P
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 1.2 V |
| Continuous Drain Current | 16 A |
| Chan Type | N-Channel |
| Pd W | 660 W |
| Rds On Ohm | 0.95 Ω |
| Gate Charge C | 120.0 |
| Gate Threshold Voltage (Vgs(th)) | 6.5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.9nF |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 3.9e-10 |
| Type | N-Channel |
| Package / Case | TO-247AD |
Product Introduction
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology to achieve excellent low on-resistance and low gate charge characteristics. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of power supply systems demanding miniaturization and higher efficiency. The body diode of SUPERFET III FRFET MOSFETs is optimized for excellent reverse recovery performance, eliminating the need for additional components and improving system reliability.
Features
- Industry standard package
- Fast recovery diode
- Avalanche rated
- Low package inductance
- Easy to install
- Space saving
- High power density
Applications
- - High-voltage switch-mode and resonant-mode power supplies - High-voltage pulse power applications - High-voltage discharge circuits in laser pulse generators, spark igniters, and RF generators - High-voltage DC-DC converters - High-voltage DC-AC inverters
Datasheet
Alternative Parts
Common IXFH16N120P alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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