IXFH110N25T
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 250 V |
| Continuous Drain Current | 110 A |
| Chan Type | N-Channel |
| Pd W | 694 W |
| Rds On Ohm | 0.026 Ω |
| Gate Charge C | 157.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.4nF |
| Vgs | +/-20V |
| Output Cap Coss | 8.5e-10 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | TO-247 |
Product Introduction
The AP120N15P/T utilizes advanced APM-SGT technology to deliver excellent drain-source on-resistance (R_DS(ON)), low gate charge, and operation down to 10V gate voltage. The device is suitable for battery protection or other switching applications.
Features
- International Standard Package
- Avalanche Rated
- High Current Handling Capability
- Fast Intrinsic Rectifier
- Low RDS(on)
- Easy to Mount
- Space Savings
- High Power Density
Applications
- - DC-DC Converters - Battery Chargers - Switch-Mode and Resonant-Mode Power Supplies - DC Choppers - AC Motor Drives - Uninterruptible Power Supplies
Datasheet
Alternative Parts
Common IXFH110N25T alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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