IXDN604SIATR
Gate Drivers
Technical Specifications
| Type | Description |
|---|---|
| Working Voltage V | 19.75 V |
| Input Logic Level - Low | 800mV |
| Low Level Delay Time | 29ns |
| High Level Delay Time | 35ns |
| Input Logic Level - High | 3V |
| Driven Configuration | Low Side |
| Current - Output Low(IOL) | 4A |
| Rise Time | 9ns |
| Type | Description |
|---|---|
| Fall Time | 8ns |
| Current - Output High(IOH) | 4A |
| Load Type | MOSFET;IGBT |
| Iq A | - |
| Operating Temp | -40°C ~ +125°C |
| Features | Enable shutdown;Interleaved conduction protection |
| Package / Case | SOIC-8 |
Product Introduction
The dual high-speed gate drivers are especially well suited for driving the latest MOSFETs and IGBTs. Each of the two outputs can source and sink 4A of current while producing voltage rise and fall times of less than 10ns. The input of each driver is virtually immune to latch up, and proprietary circuitry eliminates cross conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the family ideal for high-frequency and high-power applications.
Features
- 4A Source/Sink Drive Current
- Wide Operating Voltage Range: 4.5V to 35V
- 40°C to +125°C Extended Operating Temperature Range
- Logic Input Withstands Negative Swing of up to 5V
- Outputs May be Connected in Parallel for Higher Drive Current
- Matched Rise and Fall Times
- Low Propagation Delay Time
- Low, 10μA Supply Current
- Low Output Impedance
Applications
- - Efficient Power MOSFET and IGBT Switching - Switch Mode Power Supplies - Motor Controls - DC to DC Converters - Class-D Switching Amplifiers - Pulse Transformer Driver
Datasheet
Alternative Parts
Common IXDN604SIATR alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
Sourcing Information
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