Littelfuse/IXYS

IXDN602PI

Gate Drivers

Manufacturer
MPN
IXDN602PI
Product Type
Package / Case
DIP-8
Key Attributes
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers

Technical Specifications

TypeDescription
Working Voltage V19.75 V
Input Logic Level - Low-
Low Level Delay Time35ns
High Level Delay Time38ns
Input Logic Level - High-
Driven ConfigurationLow Side
Current - Output Low(IOL)2A
Rise Time7.5ns
TypeDescription
Fall Time6.5ns
Current - Output High(IOH)2A
Load TypeMOSFET;IGBT
Iq A-
Operating Temp-40°C ~ +125°C
FeaturesInterleaved conduction protection
Package / CaseDIP-8

Product Introduction

Dual high-speed gate drivers are especially well suited for driving the latest MOSFETs and IGBTs. Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns. The input of each driver is CMOS compatible, and is virtually immune to latch up. Proprietary circuitry eliminates cross conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the family ideal for high-frequency and high-power applications.

Features

  • 2A Peak Source/Sink Drive Current
  • Wide Operating Voltage Range: 4.5V to 35V
  • 40°C to +125°C Extended Operating Temperature Range
  • Logic Input Withstands Negative Swing of up to 5V
  • Outputs May be Connected in Parallel for Higher Drive Current
  • Matched Rise and Fall Times
  • Low Propagation Delay Time
  • Low 10μA Supply Current
  • Low Output Impedance

Applications

  • - Efficient Power MOSFET and IGBT Switching - Switch Mode Power Supplies - Motor Controls - DC to DC Converters - Class-D Switching Amplifiers - Pulse Transformer Driver

Datasheet

📄 Open Download

Alternative Parts

Common IXDN602PI alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542399000
USHTS8542390001
TARIC8542399000
TypeDetails
CAHTS8542390000
BRHTS85423999
INHTS85423900
MXHTS8542.39.99

Sourcing Information

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