Littelfuse/IXYS

IXDF602SITR

Gate Drivers

Manufacturer
MPN
IXDF602SITR
Product Type
Package / Case
SOIC-8-EP

Technical Specifications

TypeDescription
Working Voltage V19.75 V
Iq A1e-05
Input Logic Level - Low800mV
Low Level Delay Time-
High Level Delay Time-
Input Logic Level - High3V
Driven ConfigurationLow Side
Current - Output Low(IOL)2A
TypeDescription
Rise Time7.5ns
Fall Time6.5ns
Current - Output High(IOH)2A
Load TypeMOSFET;IGBT
Operating Temp-40°C ~ +125°C
FeaturesInterleaved conduction protection
Package / CaseSOIC-8-EP

Product Introduction

Dual high-speed gate drivers are especially well suited for driving the latest MOSFETs and IGBTs. Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns. The input of each driver is CMOS compatible, and is virtually immune to latch up. Proprietary circuitry eliminates cross conduction and current “shoot-through.” Low propagation delay and fast, matched rise and fall times make the family ideal for high-frequency and high-power applications.

Features

  • 2A Peak Source/Sink Drive Current
  • Wide Operating Voltage Range: 4.5V to 35V
  • 40°C to +125°C Extended Operating Temperature Range
  • Logic Input Withstands Negative Swing of up to 5V
  • Outputs May be Connected in Parallel for Higher Drive Current
  • Matched Rise and Fall Times
  • Low Propagation Delay Time
  • Low 10μA Supply Current
  • Low Output Impedance

Applications

  • - Efficient Power MOSFET and IGBT Switching - Switch Mode Power Supplies - Motor Controls - DC to DC Converters - Class-D Switching Amplifiers - Pulse Transformer Driver

Datasheet

📄 Open Download

Alternative Parts

Common IXDF602SITR alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542399000
USHTS8542390001
TARIC8542399000
TypeDetails
CAHTS8542390000
BRHTS85423999
INHTS85423900
MXHTS8542.39.99

Sourcing Information

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